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Properties of the SG01M-5LENS SiC UV Photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability,for very weak radiation
• Radiation sensitive area A = 11.0 mm2
• TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 140 nA -
SG01M-5LENS SiC UV Photodiode Specifications
Spectral Characteristics
Typical Responsivity at Peak Wavelength: 0.130/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 ~ 358nm
General Characteristics (T=25°C)
Sensitive Area (chip size = 0.20 mm2): 11.0mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10µW/cm2 at peak): 140nA
Temperature Coefficient: < 0.1%/K
Maximum Ratings
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V
